主讲人: Jingsheng Chen 教授, 新加坡国立大学
题 目:Symmetry Breaking by Materials Engineering for
Spin-Orbit-Torque Technology
日 期:2023 年 11 月 23 日 时 间:15:30-16:30
地 点:T3201
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Abstract:In this lecture, I will begin with a basic introduction of the physical origin of SOT, followed by the related symmetry analysis of a magnetic thin film in a sandwiched structure for the generation of a net SOT effect. Then I will introduce a new method---a composition gradient along the thin-film normal for breaking the inversion symmetry--to generate bulk-like SOT [1] . I will give a detailed discussion on our methods for the realization of all-electric switching of perpendicular magnetization: the use of a spin source layer with low magnetic symmetry and low crystal symmetry[2]; interfacial 3m1 symmetry, which induces a new “3m” spin torque [3]; precise control of the tilting of magnetocrystalline anisotropy easy axis [4]; and a spin-current gradient along the current direction [5].
References
[1]L. Liu et al., Phys. Rev. B, vol. 101, 220402, June 2020.
[2]J. Zhou et al., Phys. Rev. B, vol. 101, 184403, May 2020.
[3]L. Liu et al., Nat. Nanotech., vol. 16, pp. 277-282, January 2021.
[4]L. Liu et al., Nat. Nanotech., vol. 14, 939-944, September 2019.
[5]S. Chen et al., ACS Appl. Mater. Interfaces, vol. 11, pp. 30446-30452, July 2019.
主讲人简介:Jingsheng Chen教授现就职于新加坡国立大学材料科学与工程系。1999年获兰州大学博士学位,2007年12月加入新加坡国立大学。2001年至2007年期间,他在数据存储研究所担任研究科学家。在Nature、Nature Nanotechnology、Nature Comm、Science Advance、Advanced Materials、Physical Review X、Physical Review Letter等期刊发表论文300余篇,专著3章,拥有专利10余项,在国际会议上受邀演讲100余次。研究成果被引用13000余次,H指数61。他的研究兴趣包括磁性和氧化物非易失性存储器,自旋电子学,铁电隧道结,强相关氧化物材料。