教师名录
孙华锐
通讯地址:深圳市南山区西丽大学城哈工大校区G栋810
电子邮件:huarui.sun@hit.edu.cn
联系电话:26707127

个人简介

孙华锐于2015年底加入哈尔滨工业大学(深圳)理学院,任副教授,在加入哈工大深圳之前他在英国布里斯托大学物理学院的器件热成像和可靠性研究中心工作,从事新型金刚石衬底GaN材料系统的热学研究,以及GaN基电子器件电学可靠性的研究。孙华锐于2013年在美国密歇根大学安娜堡分校获得博士学位,研究内容是微纳米结构中的热输运和声子输运。他的研究兴趣包括宽禁带半导体和器件的热特性和热管理,微纳米尺度热输运及其新型测量技术,以及层状二维材料的声子物理和激子物理等。

研究方向

微纳米尺度声子输运和热输运
GaN基微电子器件的热管理和可靠性物理
新型二维材料的热输运,声子物理,激子物理
电子/光电子材料及器件热学、电学、机械性能的光学表征,以及新型测量方法的研制

教育经历

2013  美国密歇根大学(University of Michigan),博士
2009  美国密歇根大学,硕士
2006  清华大学,学士

研究与工作经历

2018-  哈尔滨工业大学(深圳),理学院,副教授,博士生导师
2015-  哈尔滨工业大学(深圳),理学院,副教授
2013-2015  英国布里斯托大学(University of Bristol),物理学院,博士后研究员

专业资质与学术兼职

2013-今  Applied Physics Letters, Journal of Applied Physics, IEEE Transactions on Electron Device Letters,Microelectronics Reliability等期刊审稿人

科研项目

2018-2020  深圳市海外高层次人才技术创新项目
2018-2019  哈工大科研创新基金
2017-2019  国家自然科学基金青年项目
2017-2019  深圳市引进人才科研启动经费项目
2017-2018  深圳市基础研究(自由探索)项目
2016-2018  哈尔滨工业大学深圳研究生院新教师启动项目
2019-  企业横向课题,若干

科研成果及奖励

  

论文及著作

[1]C. T. Yip, T. W. Lo, G. Jia, S. Zhu, H. Sun, C.-H. Lam, and D. Lei, “Tight-binding modeling of excitonic response in van der Waals stacked 2D semiconductors”, Nanoscale Horiz., 4, 969 (2019).
[2]K. Liu, J. Zhao, H. Sun*, H. Guo, B. Dai, and J. Zhu, “Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance”, Chin. Phys. B. 28(6), 060701 (2019).
[3]B. Zou, H. Sun*, H. Guo, B. Dai, and J. Zhu, “Thermal characteristics of GaN-on-diamond HEMTs: Impact of anisotropic and inhomogeneous thermal conductivity of polycrystalline diamond”, Diam. Relat. Mater. 95, 28 (2019).
[4]Y. Zhou, J. Anaya, J. W Pomeroy, H. Sun, X. Gu, A. Xie, E. Beam, M. Becker, T. A. Grotjohn, C. Lee, and M. Kuball, “Barrier Layer Optimization for Enhanced GaN-on-diamond Device Cooling”, ACS Appl. Mater. Inter. 9(39), 34416 (2017).
[5]Y. Zhou, R. Ramaneti, J. Anaya, S. Kornechuk, J. Derluyn, H. Sun, J. W Pomeroy, J. Verbeeck, K. Haenen, and M. Kuball, “Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs”, Appl. Phys. Lett. 111(4), 041901 (2017).
[6]L. Zhao, P. Yu, Z. Guo, D. Yan, H. Zhou, J. Wu, Z. Cui, H. Sun, and X. Gu, “Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress”, Chin. Phys. B 26(8), 087308 (2017).
[7]T. Brazzini, H. Sun, F. Sarti, J. W. Pomeroy, C. Hodges, M. Gurioli, A. Vinattieri, and M. Kuball, “Mechanism of hot electron electroluminescence in GaN-based transistors”, J. Phys. D: Appl. Phys. 49(43), 435101 (2016).
[8]H. Sun*, J. W. Pomeroy, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, and M. Kuball, “Temperature dependent thermal resistance of GaN-on-diamond HEMT wafers”, IEEE Electron Dev. Lett. 37(5), 621 (2016).
[9]D. Liu, H. Sun, J. W. Pomeroy, D. Frances, F. Faili, D. J. Twitchen, and M. Kuball, “GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity”, Appl. Phys. Lett. 107(25), 251902 (2015).
[10]T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence”, Microelectr. Reliab. 55(12), 2493 (2015).
[11]T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation”, Appl. Phys. Lett. 106(21), 213502 (2015).
[12]H. Sun*, R. B. Simon, J. W. Pomeroy, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications”, Appl. Phys. Lett. 106(11), 111906 (2015). (被编辑选中为亮点文章)
[13]H. Sun*, M. Montes Bajo, M. J. Uren, and M. Kuball, “Progressive failure site generation in AlGaN/GaN high electron mobility transistors under OFF-state stress: Weibull statistics and temperature dependence”, Appl. Phys. Lett. 106(4), 043505 (2015).
[14]H. Sun*, M. Montes Bajo, M. J. Uren, and M. Kuball, “Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation”, Microelectr. Reliab. 54(12), 2650 (2014).
[15]J. W. Pomeroy, R. B. Simon, H. Sun, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “Contactless thermal boundary resistance measurement of GaN-on-diamond wafers”, IEEE Electron Dev. Lett. 35(10), 1007 (2014).
[16]M. Montes Bajo, H. Sun, M. J. Uren, and M. Kuball, “Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors”, Appl. Phys. Lett. 104(22), 223506 (2014).
[17]H. Sun, V. A. Stoica, M. Shtein, R. Clarke, and K. P. Pipe, “Coherent control of GHz resonant modes by an integrated acoustic etalon”, Phys. Rev. Lett. 110(8), 086109 (2013).
[18]H. Sun and K. P. Pipe, “Perturbation analysis of acoustic wave scattering at rough solid-solid interfaces”, J. Appl. Phys. 111(2), 023510 (2012).
[19]Y. Li, V. A. Stoica, L. Endicott, G. Wang, H. Sun, K. P. Pipe, C. Uher, and R. Clarke, “Femtosecond laser-induced nanostructure formation in Sb2Te3”, Appl. Phys. Lett. 99(12), 121903 (2011).
[20]Y. Jin, A. Yadav, K. Sun, H. Sun, K. P. Pipe, and M. Shtein, “Thermal boundary resistance of copper phthalocyanine-metal interface”, Appl. Phys. Lett. 98(9), 093305 (2011).

会议论文及发表演说

会议论文
[1] J. Anaya, H. Sun, J. W. Pomeroy, and M. Kuball, “Thermal management of GaN-on-Diamond high electron mobility transistors: Effect of the nanostructure in the diamond near nucleation region”, in Proceedings of IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), pp. 1558-1565, Las Vegas, NV, USA, June 2016.
[2] H. Sun, D. Liu, J. W. Pomeroy, D. Francis, F. Faili, D. Twitchen, and M. Kuball, “GaN-on-diamond: Robust mechanical and thermal properties”, in Proceedings of Compound Semiconductor Manufacturing Technology (CS MANTECH), pp. 201-203, Miami, FL, USA, May 2016.
[3] M. Kuball, J. W. Pomeroy, J. Anaya, H. Sun, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, S, Rossi, M. Alomari, E. Kohn, L. Tóth and B. Pécz, “Novel thermal management of GaN electronics - diamond substrates” (invited), Proceedings of the ASME 2015 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems and ASME 2015 12th International Conference on Nanochannels, Microchannels, and Minichannels (InterPACKICNMM), no. IPACK2015-48145, p. V003T08A001, San Francisco, CA, USA, July 2015.
[4] H. Sun, J. W. Pomeroy, R. B. Simon, D. Francis, F. Faili, D. J. Twitchen, and M. Kuball, “Rapid characterization of GaN-on-diamond interfacial thermal resistance using contactless transient thermoreflectance”, Proceedings of Compound Semiconductor Manufacturing Technology (CS MANTECH), pp. 151-153, Scottsdale, AZ, USA, May 2015.
[5] T. Brazzini, M. A. Cabson, H. Sun, M. J. Uren, J. Lees, P. Tasker, H. Jung, H. Blanckand, and M. Kuball, “Hot electrons in AlGaN/GaN HEMTs: DC versus RF reliability”, Reliability of Compound Semiconductors Workshop (ROCS) Proc., pp. 65-68, Scottsdale, AZ, USA, May 2015.
[6] H. Sun, M. Montes Bajo, M. J. Uren, and M. Kuball, “OFF-state degradation of AlGaN/GaN HEMTs: Saturation of defect generation and impact of temperature”, Reliability of Compound Semiconductors Workshop (ROCS) Proc., pp. 45-48, Denver, CO, USA, May 2014.
[7] Y. Li, V. A. Stoica, L. Endicott, G. Wang, H. Sun, K. P. Pipe, C. Uher, and R. Clarke, “Ultrafast-laser modification of thermoelectric Sb2Te3 thin films”, Mat. Res. Soc. Symp. Proc., vol. 1456, pp. 177-182, January 2012.

任教和任导师经历

任教经历  2018,2019年秋季,硕士研究生课,微纳尺度能量输运
2019年春季/秋季,大学物理IA,大学物理IB

任导师经历  2019级博士生:邹波,吴燕燕
2019级硕士生:张亮辉
2018级硕士生:张萌
2017级硕士生:邹波,张旭
2016级硕士生:刘康
最后更新:2019-11-08 16:10:32